Growth of silicon carbide crystals by vapour-liquid-solid (VLS) mechanism in the sublimation method
- 1 September 1973
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 20 (2), 155-157
- https://doi.org/10.1016/0022-0248(73)90130-9
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Lanthanum-stimulated high-temperature whisker growth of α-SiCJournal of Crystal Growth, 1972
- The SiC phase in the system SiCB4CCMaterials Research Bulletin, 1969
- Coordination and volume changes accompanying high-pressure phase transformations of oxidesMaterials Research Bulletin, 1969
- The spiral growth of crystalsUspekhi Fizicheskih Nauk, 1961
- The growth of crystals and the equilibrium structure of their surfacesPhilosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences, 1951