Band diagram of a HgTe-CdTe semimetal-semiconductor abrupt heterostructure
- 1 May 1993
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 73 (9), 4473-4483
- https://doi.org/10.1063/1.352787
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Photon assisted reduction of interface charge between CdTe substrates and metalorganic chemical vapor deposition CdTe epilayersJournal of Applied Physics, 1993
- A proposal of a vacuum micro quantum interference transistorJournal of Applied Physics, 1993
- HgTe contacts to p-HgCdTeJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Determination of the interface charge between an epilayer and a substrate using capacitance-voltage measurementsJournal of Applied Physics, 1992
- Temperature dependence of the fundamental absorption edge of mercury cadmium tellurideJournal of Applied Physics, 1990
- Properties of sputtered mercury telluride contacts on p-type cadmium tellurideRevue de Physique Appliquée, 1988
- A review of ohmic and rectifying contacts on cadmium tellurideSolid-State Electronics, 1985
- Ohmic contacts to p-type cadmium telluride and cadmium mercury tellurideJournal of Physics D: Applied Physics, 1983
- Helicons and Nonresonant Cyclotron Absorption in Semiconductors. II.Physical Review B, 1969
- Band structure of indium antimonideJournal of Physics and Chemistry of Solids, 1957