Two-Dimensional Distributed Theory Schottky Barrier Field Effect for a Microwave Transistor
- 1 January 1973
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A small signal equivalent circuit for a SBFET derived from the basic transport equations is extended to include the effects of finite propagation velocities along the contact metallizations. Resonances are shown to occur in the device y parameters due to distributed effects along these contacts.Keywords
This publication has 4 references indexed in Scilit:
- Distributed theory for microwave bipolar transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1972
- An experimental study of distributed effects in a microwave bipolar transistorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1972
- Microwave Properties of Schottky-barrier Field-effect TransistorsIBM Journal of Research and Development, 1970
- Unified Matrix Theory of Lumped and Distributed Directional CouplersBell System Technical Journal, 1968