Single Crystal Growth of 6H-SiC by a Vacuum Sublimation Method, and Blue LEDs
- 1 January 1989
- book chapter
- Published by Springer Nature in Springer Proceedings in Physics
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Single crystal growth of SiC substrate material for blue light emitting diodesIEEE Transactions on Electron Devices, 1983
- General principles of growing large-size single crystals of various silicon carbide polytypesJournal of Crystal Growth, 1981
- A new degradation phenomenon in blue light emitting silicon carbide diodesIEEE Transactions on Electron Devices, 1981
- Site effect on the impurity levels in,, andSiCPhysical Review B, 1980
- Fabrication of 6H-SiC light-emitting diodes by a rotation dipping technique: Electroluminescence mechanismsJournal of Applied Physics, 1979
- Site-dependent donor and acceptor levels in 6 H-SiCJournal of Luminescence, 1979
- Study of silicon carbide epitaxial growth kinetics in the SiC-C systemJournal of Crystal Growth, 1979
- Liquid-phase epitaxial growth of 6H-SiC by the dipping technique for preparation of blue-light-emitting diodesJournal of Applied Physics, 1976