Degradation in Zinc-Doped GaAs Tunnel Diodes
- 1 August 1964
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 35 (8), 2481-2483
- https://doi.org/10.1063/1.1702885
Abstract
The effects of the voltage swing, peak current‐to‐capacity ratio (IP/Cjv), zinc concentration, and lithium on the degradation of the peak tunnel current are examined in zinc‐doped GaAs tunnel diodes.Keywords
This publication has 4 references indexed in Scilit:
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- Notizen: Ein Bezugsquerschnitt für die Streuung neutraler MoleküleZeitschrift für Naturforschung A, 1962
- Gallium-Arsenide Tunnel DiodesProceedings of the IRE, 1960
- Fluorescent X-Ray Spectrographic Determination of Tantalum in Commercial Niobium OxidesAnalytical Chemistry, 1956