Patterning-free integration of polymer light-emitting diode and polymer transistor
- 20 April 2004
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 84 (18), 3558-3560
- https://doi.org/10.1063/1.1728301
Abstract
[[abstract]]© 2004 American Institute of Physics-An integration of polymer light-emitting diode (LED) and polymer transistor was analyzed where no patterning of organic layers was required. For hole-transport layer (HTL) in polymer LED, an intrinsic high-mobility semiconducting conjugated polymer poly(3-hexylthiophene)(P3HT) was used. The light emission efficiency with conventional heavily doped HTL was slightly lower than LED. The brightness of 490 cd/m2 was achieved with maximum drain current of 3.6 μA for 100×100 μm active pixel LED.[[fileno]]2030159010009[[department]]電機工程學Keywords
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