Low temperature InP layer transfer
- 1 January 1999
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 35 (4), 341-342
- https://doi.org/10.1049/el:19990226
Abstract
High quality single crystalline 3 in Inp thin layers were transferred onto oxidised Si substrates at 150°C by wafer bonding and layer splitting from InP wafers which were co-implanted by B and H ions with the H implantation performed at 90°C.Keywords
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