Gallium arsenide and other compound semiconductors on silicon
- 1 October 1990
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 68 (7), R31-R58
- https://doi.org/10.1063/1.346284
Abstract
The physics of the growth mechanisms, characterization of epitaxial structures and device properties of GaAs and other compound semiconductors on Si are reviewed in this paper. The nontrivial problems associated with the heteroepitaxial growth schemes and methods that are generally applied in the growth of lattice mismatched and polar on nonpolar material systems are described in detail. The properties of devices fabricated in GaAs and other compound semiconductors grown on Si substrates are discussed in comparison with those grown on GaAs substrates. The advantages of GaAs and other compound semiconductors on Si, namely, the low cost, superior mechanical strength, and thermal conductivity, increased wafer area, and the possibility of monolithic integration of electronic and optical devices are also discussed.Keywords
This publication has 105 references indexed in Scilit:
- Secondary ion mass spectrometry study of e x s i t u annealing of epitaxial GaAs grown on Si substratesApplied Physics Letters, 1988
- Nucleation of GaAs on Si: Experimental evidence for a three-dimensional critical transitionApplied Physics Letters, 1987
- Initial stages of epitaxial growth of GaAs on (100) siliconJournal of Applied Physics, 1987
- Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substratesApplied Physics Letters, 1987
- Growth of high quality GaAs layers on Si substrates by MOCVDJournal of Crystal Growth, 1986
- III–V semiconductors on Si substrates: New directions for heterojunction electronicsSolid-State Electronics, 1986
- GaAlAs/GaAs heterojunction bipolar phototransistors grown by LPE with a current gain of 50 000Electronics Letters, 1985
- Antiphase domain structures in GaP and GaAs epitaxial layers grown on Si and GeJournal of Crystal Growth, 1977
- Defects in epitaxial multilayersJournal of Crystal Growth, 1975
- Model for the (100) Surfaces of Silicon and GermaniumThe Journal of Chemical Physics, 1962