Low temperature pulsed plasma deposition. Part I—a new technique for thin film deposition with complete gas dissociation
- 31 December 1988
- Vol. 38 (8-10), 627-631
- https://doi.org/10.1016/0042-207x(88)90431-9
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Etching of chemically vapour-deposited amorphous Si3N4-C composites in HF solutionJournal of Materials Science, 1983
- Mechanisms of Plasma‐Enhanced Silicon Nitride Deposition Using SiH4 / N 2 MixtureJournal of the Electrochemical Society, 1981
- The hydrogen content of plasma-deposited silicon nitrideJournal of Applied Physics, 1978