An investigation of ion-bombarded and annealed 〈111〉 surfaces of Ge by spectroscopic ellipsometry
- 30 June 1980
- journal article
- Published by Elsevier in Surface Science
- Vol. 96 (1-3), 294-306
- https://doi.org/10.1016/0039-6028(80)90308-8
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Optical properties of Au: Sample effectsPhysical Review B, 1980
- Investigation of effective-medium models of microscopic surface roughness by spectroscopic ellipsometryPhysical Review B, 1979
- Nondestructive characterization of interface layers between Si or GaAs and their oxides by spectroscopic ellipsometryJournal of Vacuum Science and Technology, 1979
- Polarimetry of Specular and Non-Multiple-Scattered Electromagnetic Radiation from Selectively Roughened Si SurfacesPhysical Review Letters, 1978
- Effects of ion etching on the properties of GaAsApplied Optics, 1978
- Methods for drift stabilization and photomultiplier linearization for photometric ellipsometers and polarimetersReview of Scientific Instruments, 1978
- Precision Bounds to Ellipsometer SystemsApplied Optics, 1975
- Effects of component optical activity in data reduction and calibration of rotating-analyzer ellipsometersJournal of the Optical Society of America, 1974
- Optical Properties of Amorphous Germanium FilmsPhysical Review B, 1970
- Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77°K and 300°KPhysical Review B, 1955