High quality type II InAs/GaSb superlattices with cutoff wavelength ∼3.7 μm using interface engineering

Abstract

We report the most recent advance in the area of type II InAs/GaSb superlattices that have cutoff wavelength of ∼3.7 μm. With ${\mathrm{Ga}}_x{\mathrm{In}}_{\text{1−x}}$ type interface engineering techniques, the mismatch between the superlattices and the GaSb (001) substrate has been reduced to <0.1%. There is no evidence of dislocations using the best examination tools of x-ray, atomic force microscopy, and transmission electron microscopy. The full width half maximum of the photoluminescence peak at 11 K was ∼4.5 meV using an ${\mathrm{Ar}}^{+}$ ion laser (514 nm) at fluent power of 140 mW. The integrated photoluminescence intensity was linearly dependent on the fluent laser power from 2.2 to 140 mW at 11 K. The temperature-dependent photoluminescence measurement revealed a characteristic temperature of one $T_1\text{=245\hspace{0.05em}}\mathrm{K}$ at sample temperatures below 160 K with fluent power of 70 mW, and $T_1\text{=203\hspace{0.05em}}\mathrm{K}$ for sample temperatures above 180 K with fluent power of 70 and 420 mW.