Characterization and luminescence properties of Sr2Si5N8:Eu2+ phosphor for white light-emitting-diode illumination

Abstract

${\mathrm{Eu}}^{2+}$ -doped ternary nitride phosphor, ${\mathrm{Sr}}_2{\mathrm{Si}}_5{\mathrm{N}}_8:{\mathrm{Eu}}^{2+}$ , was prepared by the carbothermal reduction and nitridation method. The Rietveld refinement analysis showed that the single phase products were obtained. Two main absorption bands were observed on the diffuse reflection spectra peaking at about 330 and $420\mathrm{nm}$ , so that the resultant phosphor can be effectively excited by InGaN light-emitting diodes. The emission peak position of ${\left({\mathrm{Sr}}_{1-x}{\mathrm{Eu}}_x\right)}_2{\mathrm{Si}}_5{\mathrm{N}}_8:{\mathrm{Eu}}^{2+}$ series varied from $618\text{to}690\mathrm{nm}$ with increasing ${\mathrm{Eu}}^{2+}$ ion concentration. The redshift behavior of the emission band was discussed on the basis of the configuration coordination model.