Effects of alloy intermixing on the lateral confinement potential in InAs∕GaAs self-assembled quantum dots probed by intersublevel absorption spectroscopy
- 16 April 2007
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 90 (16)
- https://doi.org/10.1063/1.2724893
Abstract
No abstract availableKeywords
This publication has 31 references indexed in Scilit:
- Control of fine-structure splitting of individual InAs quantum dots by rapid thermal annealingApplied Physics Letters, 2007
- Cylindrically shaped zinc-blende semiconductor quantum dots do not have cylindrical symmetry: Atomistic symmetry, atomic relaxation, and piezoelectric effectsPhysical Review B, 2005
- Control of fine-structure splitting and biexciton binding inquantum dots by annealingPhysical Review B, 2004
- Pseudopotential calculation of the excitonic fine structure of million-atom self-assembled quantum dotsPhysical Review B, 2003
- On the detectivity of quantum-dot infrared photodetectorsApplied Physics Letters, 2001
- Electronic and optical properties of strained quantum dots modeled by 8-band k⋅p theoryPhysical Review B, 1999
- Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectorsApplied Physics Letters, 1998
- Normal-incidence intersubband (In, Ga)As/GaAs quantum dot infrared photodetectorsApplied Physics Letters, 1998
- Mid-infrared photoconductivity in InAs quantum dotsApplied Physics Letters, 1997
- Quantum well intermixingSemiconductor Science and Technology, 1993