Defect model of charge transfer doping at a-SiNx:H/a-Si:H interfaces
- 1 December 1985
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 77-78, 1007-1010
- https://doi.org/10.1016/0022-3093(85)90831-2
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Interface density of neutral dangling bonds in a-Si:H/a-SiNx:H superlatticesSolid State Communications, 1985
- Nature of defects in amorphous GeS and SiNJournal of Non-Crystalline Solids, 1985
- Properties of amorphous semiconducting multilayer films and of alloysPhysical Review B, 1984
- Charge transfer doping in amorphous semiconductor superlatticesApplied Physics Letters, 1984
- Evidence for Lattice-Mismatch—Induced Defects in Amorphous Semiconductor HeterojunctionsPhysical Review Letters, 1984
- Independence of Fermi-Level Position and Valence-Band Edge Discontinuity at GaAs-Ge(100) InterfacesPhysical Review Letters, 1984
- Gap states in silicon nitrideApplied Physics Letters, 1984
- Empirical rule to predict heterojunction band discontinuitiesJournal of Applied Physics, 1983
- Theory of defects in vitreous silicon dioxidePhysical Review B, 1983
- Electron spin resonance and hopping conductivity of a-SiOxJournal of Non-Crystalline Solids, 1979