Picosecond measurement of spontaneous and stimulated emission from injection lasers

Abstract
Spontaneous and stimulated emission from gain-switched injection lasers is measured directly with picosecond resolution. Below threshold, the luminescence time profile shows a carrier concentration rise time of 300 ps in a transverse-junction AlGaAs laser diode. Above threshold, laser pulse widths down to 30 ps were observed and a regime of operation was found where a single longitudinal mode predominates in the output spectrum.