The effect of strain on MOS transistors
- 1 March 1969
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 12 (3), 185-189
- https://doi.org/10.1016/0038-1101(69)90030-6
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Mobility Anisotropy and Piezoresistance in Silicon p-Type Inversion LayersJournal of Applied Physics, 1968
- The Effect of Homogeneous Mechanical Stress on the Electrical Resistance of CrystalsPhysical Review B, 1932