GaAsP/Si tandem solar cells: Realistic prediction of efficiency gain by applying strain-balanced multiple quantum wells
- 1 June 2018
- journal article
- conference paper
- Published by Elsevier BV in Solar Energy Materials and Solar Cells
- Vol. 180, 303-310
- https://doi.org/10.1016/j.solmat.2017.06.060
Abstract
No abstract availableKeywords
Funding Information
- Deutsche Forschungsgemeinschaft (HA3096/4-2)
- Bundesministerium für Bildung und Forschung (03SF0525B)
This publication has 28 references indexed in Scilit:
- A quantum-well superlattice solar cell for enhanced current output and minimized drop in open-circuit voltage under sunlight concentrationJournal of Physics D: Applied Physics, 2012
- Solar cell generations over 40% efficiencyProgress In Photovoltaics, 2012
- Kinetic analysis of surface adsorption layer for InGaAsP-related binary materials using in situ RASJournal of Crystal Growth, 2008
- Low-mobility solar cells: a device physics primer with application to amorphous siliconSolar Energy Materials and Solar Cells, 2003
- Growth and Characterization of GaPNAs on SiMRS Proceedings, 2003
- Critical built-in electric field for an optimum carrier collection in multiquantum well p-i-n diodesApplied Physics Letters, 1999
- Modeling of two-junction, series-connected tandem solar cells using top-cell thickness as an adjustable parameterJournal of Applied Physics, 1990
- A new approach to high-efficiency multi-band-gap solar cellsJournal of Applied Physics, 1990
- Band lineups and deformation potentials in the model-solid theoryPhysical Review B, 1989
- Thermionic emission and Gaussian transport of holes in a GaAs/As multiple-quantum-well structurePhysical Review B, 1988