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A new, insulated-gate transistor
Home
Publications
A new, insulated-gate transistor
A new, insulated-gate transistor
NT
N. Tombs
N. Tombs
HW
H. Wegener
H. Wegener
RW
R. Wheeler
R. Wheeler
BK
B. Kenney
B. Kenney
AC
A. Coppola
A. Coppola
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1 January 1966
conference paper
Published by
Institute of Electrical and Electronics Engineers (IEEE)
p.
58-59
https://doi.org/10.1109/isscc.1966.1157687
Abstract
No abstract available
Keywords
INSULATION
DIODES
FETS
MOS CAPACITORS
FABRICATION
THRESHOLD VOLTAGE
DIELECTRIC SUBSTRATES
ELECTRODES
SILICON ON INSULATOR TECHNOLOGY
SURFACE TREATMENT
Cited by 3 articles