Epitaxy of Germanium Films on Gallium Arsenide by Vacuum Evaporation
- 1 August 1966
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 37 (9), 3638-3639
- https://doi.org/10.1063/1.1708926
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Phase equilibria in the GaAs and the GaP systemsJournal of Physics and Chemistry of Solids, 1965
- Room Temperature Chemical Polishing of Ge and GaAsJournal of the Electrochemical Society, 1964
- Evaporation-condensation method for making germanium layers for transistor purposesSolid-State Electronics, 1963
- The effect of vacuum-evaporation parameters on the structural, electrical and optical properties of thin germanium filmsSolid-State Electronics, 1963
- Epitaxy of Germanium Films on Germanium by Vacuum EvaporationJournal of Applied Physics, 1962
- Some properties of vacuum-evaporated thin films of germaniumIRE Transactions on Electron Devices, 1961
- Germanium-Gallium Arsenide Heterojunctions [Letter to the Editor]IBM Journal of Research and Development, 1960