Abstract
This paper, the third and final of a three part series, presents the electrical properties of postdeposition annealed, lead lanthanum titanate (PLT) thin films deposited by multi-ion-beam reactive sputtering (MIBERS). Also, a model is presented that explains the relations among composition, crystallographic structure, microstructure, and electrical properties of the PLT thin films. Thin films of PLT consisting of the perovskite phase exhibit 〈100〉 textured microstructures. Addition of a critical quantity of excess PbO results in the loss of this 〈100〉 texture, and continuity of the perovskite phase is disrupted while both excess PbO and porosity phases become continuous due to a percolation effect. Films with textured microstructures consisting of a continuous perovskite phase exhibit relatively high dc resistivities, high dielectric permittivities, and high remanent polarizations. At the transition between textured and nontextured microstructures, a discontinuous drop in the electrical properties occurs due to the ensuing continuity of the excess PbO and porosity. These composition-induced changes in the electrical properties were quantitatively modeled by applying a simple mixing rule model to the microstructure model developed in Part II of this series.