(GaAl)As-GaAs heterojunction transistors with high injection efficiency
- 1 May 1975
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 46 (5), 2120-2124
- https://doi.org/10.1063/1.321850
Abstract
n (GaAl)As‐pGaAs‐nGaAs heterojunction transistors were fabricated by the liquid‐phase epitaxial technique, where two kinds of etchants were used to expose the pGaAs base region. The characteristics of the heterojunction transistors are examined as functions of the injection current density and the temperature. Electrical measurements showed that the transistors have a common emitter current gain β of up to 350. The defect current component in the emitter heterojunction is the recombination current in the depletion region.Keywords
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