DEEP (1–10 μ) PENETRATION OF ION-IMPLANTED DONORS IN SILICON
- 1 September 1966
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 9 (5), 203-205
- https://doi.org/10.1063/1.1754710
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Penetration of Heavy Ions of keV Energies into Monocrystalline TungstenPhysical Review B, 1964
- RANGE OF ENERGETIC Xe125 IONS IN MONOCRYSTALLINE SILICONCanadian Journal of Physics, 1964
- Impurity Distribution in Epitaxial Silicon FilmsJournal of the Electrochemical Society, 1962