Spectroscopic ellipsometry for monitoring and control of molecular beam epitaxially grown HgCdTe heterostructures
- 1 June 1997
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 26 (6), 502-506
- https://doi.org/10.1007/s11664-997-0184-7
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- In situ sensors for monitoring and control in molecular beam epitaxial growth of Hg1−xCdxTeJournal of Electronic Materials, 1996
- Independently accessed back-to-back HgCdTe photodiodes: A new dual-band infrared detectorJournal of Electronic Materials, 1995
- High-speed spectral ellipsometry for in situ diagnostics and process controlJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994