Low threshold channelled-substrate buried crescent InGaAsP lasers emitting at 1.54 μm

Abstract

Double-heterostructure lasers with crescent-shaped InGaAsP active layers have been fabricated with CW emission of 1.54 μm. Lowest CW thresholds are 45–47 mA for a 200 μm long cavity at 25°C. The lasing near-field widths are 2.5–3.0 μm and the spectral widths to 10% of peak are 4–5 nm under both CW conditions and modulation up to 320 Mbit/s.