New minority hole sinked photoconductive detector

Abstract

We demonstrate a new photoconductive device called minority hole sinked photoconductive detector. This detector has a back gate electrode for removing slow minority holes, resulting in an improvement of the detector’s fall time from 1 ns to 450 ps down to 80 ps. This represents nearly an order of magnitude improvement in the gain-bandwidth product. Furthermore, the back gate bias can reduce the noise power by 1 dB at 100 MHz and 0.25 dB at 800 MHz at 1.2-MHz noise bandwidth.