Molecular-beam epitaxy of Si on a CaF2/Si (100) structure

Abstract

Heteroepitaxial growth of Si on a CaF₂/Si (100) structure by molecular‐beam epitaxy has been investigated. High‐quality Si layers have been grown at low temperatures (650–760 °C) by amorphous Si predeposition and careful heat treatment prior to the Si molecular‐beam epitaxy. It has been found that the predeposited Si layer is crystallized by solid‐phase epitaxy, and the behavior of the predeposited Si has been discussed. Ca segregation at the Si surface has been found and related to the superstructures of the Si surface. The Ca segregation has been reduced by the solid‐phase epitaxy of Si performed on top of the molecular‐beam‐epitaxial Si layer.