Impurity effect on the growth of dislocation-free InP single crystals
- 1 July 1976
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (7), 3374-3376
- https://doi.org/10.1063/1.323099
Abstract
Dislocation‐free InP crystals were pulled in a 〈111〉 %In direction by using a liquid encapsulation technique. InP crystals were free from dislocations only when they were grown from a melt doped heavily with impurities. Zn was found to be the most effective impurity to reduce the grown‐indislocation.Dislocation density was drastically decreased when Zn concentration exceeded a value of 1018/cm3. Donor impurities, such as S and Te, were also effective in reducing the grown‐indislocation. A single‐bond energy model for the impurity effect on reduction of dislocations is proposed. Zn and S were presumed to also be effective in making dislocation‐free GaAs, in light of this model. These were confirmed by experiment.Keywords
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