A Four Stage V-Band MOCVD HEMT Amplifier
- 1 January 1987
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 2, 1015-1018
- https://doi.org/10.1109/mwsym.1987.1132596
Abstract
V-band multi-stage Low Noise Amplifiers (LNA) were developed utilizing MOCVD High Electron Mobility Transistors (HEMTs). The amplifiers have demonstrated 16.57 dB gain with an associated noise figure of 5.65 dB and over 19 dB gain with 7.91 dB noise figure at 60.4 GHz. Another amplifier achieved over 5GHz bandwidth with greater than 14dB gain. The amplifier is integrated in a single housing that is 1.75 inch long.Keywords
This publication has 4 references indexed in Scilit:
- A 60 GHz GaAs FET AmplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- 60 and 70 GHz (HEMT) AmplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Some results on the edge-coupled microstrip section as an impedance transformerIEE Journal on Microwaves, Optics and Acoustics, 1979
- Octave-Band Microstrip DC Blocks (Short Papers)IEEE Transactions on Microwave Theory and Techniques, 1972