Hole Trapping in Germanium Bombarded by High-Energy Electrons

Abstract

On the basis of an investigation of $n$-type germanium bombarded with high-energy electrons, it is herein concluded that a particular set of temporary hole traps is created by the bombardment. The bombardment centers which remained in the samples at room temperature were measured by resistivity changes and found to agree with the densities of traps. Different samples with trap densities varying from 5×${10}^{12}$/cc to 5×${10}^{14}$/cc were studied.