Magnetoconductance of pinched silicon accumulation layers

Abstract

The magnetoconductance of ultranarrow Si accumulation layers has been measured using a pinched metal-oxide-semiconductor field-effect transistor. The data have two noteworthy features. First, the electron density inferred from Shubnikov–de Haas oscillations is much smaller than that expected for our device. Also, structure in the magnetoconductance persists down to low gate voltages where the temperature-dependent conductance appears to be in the limit of one-dimensional strong localization.