Secondary illumination effects in the photoemission spectra of GaAs and CdS
- 31 July 1980
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 35 (3), 277-280
- https://doi.org/10.1016/0038-1098(80)90496-2
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Chemical mechanisms of Schottky barrier formationJournal of Vacuum Science and Technology, 1979
- Characterization of the electron interaction with ZnSe surface states by the photovoltaic modulation of low-energy-electron transmissionPhysical Review B, 1979
- Optical modulation of low-energy-electron reflection and transmission at a Si surfacePhysical Review B, 1978
- Surface charging effects on valence band spectra in X-ray photoemission: Crystalline and Amorphous As2S3Solid State Communications, 1976
- Synchrotron radiation studies of electronic structure and surface chemistry of GaAs, GaSb, and InPJournal of Vacuum Science and Technology, 1976
- Evidence for a Surface-State Exciton on GaAs(110)Physical Review Letters, 1975
- Electronic properties of cleaved molybdenum disulphide surfacesSurface Science, 1974
- Electronic properties of clean and cesiated (110) surfaces of GaSbSurface Science, 1972
- Influence of Additional Illumination on the Photoemission from n‐ and p‐Type Gallium Arsenide Single CrystalsPhysica Status Solidi (b), 1969
- Large-Signal Surface Photovoltage Studies with GermaniumPhysical Review B, 1958