Magnetic-field-induced multiple electronic states in
- 1 September 1996
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 54 (9), 6073-6076
- https://doi.org/10.1103/physrevb.54.6073
Abstract
We have observed multiple electronic states in the presence of a magnetic field in the half-doped system. The resistivity of each state differs from one another by at least one order of magnitude. Application of a magnetic field induces first-order phase transitions among these states. A maximum -fold magnetoresistance ratio has been observed at 4.2 K between the least and the most conductive phases. Our results differ from early observations that there is only one metal-to-insulator (two states) transition in other related half-doped systems.
Keywords
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