Contact Resistance Dependence on InGaAsP Layers Lattice-Matched to InP
- 1 August 1980
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 19 (8), L495-497
- https://doi.org/10.1143/jjap.19.l495
Abstract
The effect of composition on the contact resistance between AuZn alloy and p-type InGaAsP layers lattice-matched to InP has been investigated and it was found that a lower contact resistance could be obtained by decreasing the energy gap of the quaternary layer. This fact can be explained in terms of carrier tunnelling as a current transport mechanism.Keywords
This publication has 4 references indexed in Scilit:
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- Schottky-barrier height of Au/p-InGaAsP alloys lattice-matched to InPJournal of Vacuum Science and Technology, 1976
- Specific contact resistance of metal-semiconductor barriersSolid-State Electronics, 1971
- Ohmic contacts for GaAs devicesSolid-State Electronics, 1967