A physically-based semi-empirical series resistance model for deep-submicron MOSFET I-V modeling
- 1 June 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 47 (6), 1300-1302
- https://doi.org/10.1109/16.842978
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
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