Raman Scattering by Carriers in Landau Levels

Abstract

The cross sections for Raman scattering by electrons and holes in a semiconductor subjected to a magnetic field are calculated. A number of processes in which the Landau level number changes by $\Delta n=2\mathrm{}$, as well as a spin-flip process with $\Delta n=0\mathrm{}$, are considered. Except for the $\Delta n=2\mathrm{}$ process in the conduction band, the matrix elements are independent of the strength of the magnetic field. Scattering cross sections are estimated for InSb (incident photon energy 0.12 eV) and InP (incident photon energy 1.17 eV). The magnitude of these cross sections suggests that it may be possible to use Raman scattering to measure effective masses.