A RESONANT-GATE SILICON SURFACE TRANSISTOR WITH HIGH-Q BAND-PASS PROPERTIES
- 15 August 1965
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 7 (4), 84-86
- https://doi.org/10.1063/1.1754323
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Tuned integrated circuits—A state-of-the-art surveyProceedings of the IEEE, 1964
- The silicon insulated-gate field-effect transistorProceedings of the IEEE, 1963