Semi-insulating InP co-doped with Ti and Hg
- 1 February 1987
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 2 (2), 78-82
- https://doi.org/10.1088/0268-1242/2/2/002
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Properties of titanium in InPJournal of Physics C: Solid State Physics, 1986
- An electron paramagnetic resonance study of vanadium-doped InP compensated by electron irradiationJournal of Physics C: Solid State Physics, 1985
- Shallow p+ layers in In0.53Ga0.47As by Hg implantationElectronics Letters, 1985
- Redistribution of Fe in thermally annealed semi-insulating InP(Fe): Determination of Fe diffusion coefficient in InPJournal of Applied Physics, 1984
- Synthesis, crystal growth and characterization of InPJournal of Crystal Growth, 1983
- Electron paramagnetic resonance of ZnS:Sc2+Journal of Physics C: Solid State Physics, 1974
- An electron-paramagnetic-resonance study of the dynamic Jahn-Teller effect for Sc2+ in ZnSPhysics Letters A, 1973