Interface stability and the growth of optical quality perovskites on MgO
- 25 April 1994
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 72 (17), 2741-2744
- https://doi.org/10.1103/physrevlett.72.2741
Abstract
An understanding of heteroepitaxy between perovskite and alkaline earth oxides is developed in terms of ion size and interfacial electrostatics. Interfacial energy minimization at the first atomic layers is the basis for a commensurate, unit-cell stability. This unit-cell stability presents the opportunity to study reduced dimensional or two-dimensional phenomena in thin-film ferroelectrics and is the basis for growth of high crystal quality, μm-thick films for optical device applications.Keywords
This publication has 15 references indexed in Scilit:
- Second-harmonic generation of poled BaTiO3 thin filmsApplied Physics Letters, 1993
- Difference Raman spectra of PbTiO3 thin films grown by metalorganic chemical vapor depositionApplied Physics Letters, 1993
- The growth process and certain ferroelectric properties of heteroepitaxial (Ba1−xSrx)TiO3/MgO(001) thin filmsThin Solid Films, 1992
- Growth of YBa2Cu3O7 thin films on MgO: The effect of substrate preparationApplied Physics Letters, 1990
- High critical currents in strained epitaxial YBa2Cu3O7−δ on SiApplied Physics Letters, 1990
- Superconducting superlattices: Verification of two-dimensional nature in high T c Bi2Sr2(Ca1−xYx)Cu2O8 superconductorsApplied Physics Letters, 1990
- Growth characterization of YBa2Cu3O7−x thin films on (100) MgOApplied Physics Letters, 1989
- Growth of BaTiO3SrTiO3 thin films by r.f. magnetron sputteringThin Solid Films, 1989
- I n s i t u epitaxial growth of Y1Ba2Cu3O7−x films by molecular beam epitaxy with an activated oxygen sourceApplied Physics Letters, 1988
- Dielectric and Pyroelectric Properties of PbTiO3 Thin FilmJapanese Journal of Applied Physics, 1985