Temperature-dependent electronic excitations of the Si(111)2×1 surface
- 15 March 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 31 (6), 4077-4079
- https://doi.org/10.1103/physrevb.31.4077
Abstract
Electron-energy-loss measurements on cleaved Si(111) 2×1 surfaces show a temperature dependence in the position and shape of the absorption edge of the ∼0.5-eV surface-state transition. The observed trends in the onset line shape provide experimental evidence for surface-state excitonic polarons. In addition, a lower-lying, defect-related surface-state transition at ∼0.35 eV is studied at low temperature and found to have localized character.Keywords
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