Low‐Temperature Growth of 3 C ‐ SiC on Si Substrate by Chemical Vapor Deposition Using Hexamethyldisilane as a Source Material

Abstract

Crystal growth of on Si(100), (111) substrate was carried out by atmospheric pressure chemical vapor deposition using hexamethyldisilane and gas mixtures. Temperature dependence of growth rate and crystallinity of films were examined. The growth process was characterized by a mass spectrometric study of the decomposition of HMDS and mixtures. Using HMDS as a source material, low temperature epitaxy was realized at a substrate temperature of 1100°C. With and without a carbonized buffer layer, single‐crystal was grown on Si(111) substrate at the growth rates as high as 700 Å/min. With Si(100) as a substrate, single crystals were grown only with a buffer layer.