Nanometer scale wire structures fabricated by diffusion-induced selective disordering of a GaAs(AlGaAs) quantum well
- 26 June 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (26), 2692-2694
- https://doi.org/10.1063/1.101037
Abstract
A shallow zinc diffusion technique is used to selectively disorder a GaAs quantum well creating nanometer scale wire structures. Spectrally resolved cathodoluminescence images of the structures are presented as well as local spectra of cathodoluminescence emission from the structures. Blue shifting of the luminescence from the wire structures is observed.Keywords
This publication has 6 references indexed in Scilit:
- Cathodoluminescence of oval defects in GaAs/AlxGa1−xAs epilayers using an optical fiber light collection systemApplied Physics Letters, 1988
- Low-temperature photoluminescence from InGaAs/InP quantum wires and boxesApplied Physics Letters, 1987
- Optically detected carrier confinement to one and zero dimension in GaAs quantum well wires and boxesApplied Physics Letters, 1986
- Optical spectroscopy of ultrasmall structures etched from quantum wellsApplied Physics Letters, 1986
- Selective Zn diffusion inn-GaAs with a sputtered Si mask at 650°CElectronics Letters, 1986
- Disorder of an AlAs-GaAs superlattice by impurity diffusionApplied Physics Letters, 1981