Photoluminescence band near 2.9 eV in undoped GaN epitaxial layers
- 1 April 2000
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 87 (7), 3351-3354
- https://doi.org/10.1063/1.372348
Abstract
The broad photoluminescence band with a maximum at about 2.9 eV widely observed in undoped epitaxial GaN is studied as a function of temperature and excitation intensity. We attribute the band to transitions from a shallow donor to a deep localized acceptor. The zero-phonon transition for this band is at 3.098 eV as determined from the fine structure at low temperatures. A local vibrational mode in the ground state with an energy of 36 meV is found.Keywords
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