Extremely high-quality GaInAs/AlInAs single quantum wells grown by molecular beam epitaxy

Abstract

Conventional molecular beam epitaxy (MBE) has been used to grow extremely high-quality single quantum wells in the GaInAs/AlInAs materials system. GaInAs wells varying in thickness from 6.7 Å to 122Å are clearly resolved in the 4K photoluminescence spectrum. Emission from the narrowest quantum well was observed at 897.3 nm, which we believe is at a shorter wavelength than any previously reported for GalnAs quantum wells. The FWHM of the luminescence lines are, in some instances, nearly an order of magnitude narrower than any previously recorded for this materials system.