On the properties of InSb quantum wells
- 29 February 1984
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 27 (2), 113-120
- https://doi.org/10.1016/0038-1101(84)90101-1
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- On the possibility of intrinsic negative differential resistance in III-V quantum wellsJournal of Physics C: Solid State Physics, 1983
- Impact ionisation inn-Type InSb at 77 KApplied Physics A, 1983
- The electron-phonon interaction in quasi-two-dimensional semiconductor quantum-well structuresJournal of Physics C: Solid State Physics, 1982
- Impact Ionisation and Quantum Efficiency in InSbPhysica Status Solidi (b), 1982
- High electric-field hall effect measurements onn-type InSb at 77 KApplied Physics A, 1982
- Thresholds for impact ionisation in InSb at 77KApplied Physics A, 1981
- Negative differential resistance through real-space electron transferApplied Physics Letters, 1979
- Electron Mobility in Direct-Gap Polar SemiconductorsPhysical Review B, 1970
- High-Field Transport in- Type GaAsPhysical Review B, 1968
- Band structure of indium antimonideJournal of Physics and Chemistry of Solids, 1957