Theory of Line-Shapes of Interband Magneto-Optical Absorption in Semiconductors

Abstract

A theory of line shape of I. M. O.-absorption is developed with use of the two complementary approximations, one of which is an approach from the strong magnetic field and the other is that from the weak field. The interaction between carrier and phonon is taken into account after the method of generating function. The results for the scattering probability and the self-energy are shown to be in good agreement with the observed values. The calculated line shape which corresponds to the minimum photon energy can fairly explain the observed behavior.