Growth of lowly Nd doped GdVO4 single crystal and its laser properties
- 15 June 2000
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 216 (1-4), 367-371
- https://doi.org/10.1016/s0022-0248(00)00438-3
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Growth and thermal properties of Nd:GdVO4 single crystalMaterials Research Bulletin, 1999
- Berry Phases for Many-Spin Systems with Anisotropy Exchange Interaction in a Strong Magnetic FieldChinese Physics Letters, 1999
- Laser output power over 5 W at 1.06 μm for Nd:GdVO4 single crystalOptics & Laser Technology, 1999
- Performance of a diode-pumped 5 W Nd 3+ :GdVO 4 microchip laser at 1.06 μmApplied Physics B Laser and Optics, 1999
- Investigations on the Growth and Laser Properties of Nd:GdVO4 Single CrystalCrystal Research and Technology, 1998
- 430-mW single-transverse mode diode-pumped Nd:YVO/sub 4/ laser at 671 nmIEEE Journal of Quantum Electronics, 1998
- Growth and Characterization of Gadolinium Vanadate GdVO4 Single Crystals for Laser ApplicationsJapanese Journal of Applied Physics, 1996
- GdVO4as a new medium for solid-state lasers: some optical and thermal properties of crystals doped with Cd3+, Tm3+, and Er3+ionsQuantum Electronics, 1995
- Spectroscopic characterization and laser performance of diode-laser-pumped Nd: GdVO4Applied Physics B Laser and Optics, 1994
- The Nd:GdVO4crystal: a new material for diode-pumped lasersSoviet Journal of Quantum Electronics, 1992