The Resistivity and Hall Effect of Germanium at Low Temperatures
- 15 August 1950
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 79 (4), 726-727
- https://doi.org/10.1103/physrev.79.726
Abstract
DOI:https://doi.org/10.1103/PhysRev.79.726Keywords
This publication has 6 references indexed in Scilit:
- Theory of Resistivity and Hall Effect at Very Low TemperaturesPhysical Review B, 1950
- Resistivity of Semiconductors Containing Both Acceptors and DonorsPhysical Review B, 1950
- Theoretical Hall Coefficient Expressions for Impurity SemiconductorsPhysical Review B, 1950
- Pressure Coefficient of Surface Tension and the Expansion Ratio of High Pressure Cloud ChambersPhysical Review B, 1947
- Erratum: Transition from Classical to Quantum Statistics in Germanium Semiconductors at Low Temperature [Phys. Rev. 71, 374 (1947)]Physical Review B, 1947
- Transition from Classical to Quantum Statistics in Germanium Semiconductors at Low TemperaturePhysical Review B, 1947