Self-consistent simulation of quantization effects and tunneling current in ultra-thin gate oxide MOS devices
- 20 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
In this paper we report on the self-consistent modeling and simulation of quantization effects and tunneling current in MOS devices. The simulation model features an original scheme for the self-consistent solution of Poisson and Schrodinger equations and it is used for the extraction of the oxide thickness, by fitting CV curves, and the calculation of the tunneling current. Simulations and experiments are compared for different device types and oxide thicknesses (1.5-6.5 nm) showing good agreement and pointing out the importance of quantum mechanical modeling and the presence of many tunneling mechanisms in ultra-thin oxide MOS devices.Keywords
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