Noise parameters and light sensitivity of low-noise high-electron-mobility transistors at 300 and 12.5 K

Abstract

The four noise parameters of cryogenically cooled HEMT's have been investigated. Two different HEMT structures, with and without spacer layer were tested. The noise parameters of both structures were similar at the room temperature, while they were dramatically different at cryogenic temperatures. The minimum noise temperatures measured at 8.4 GHz were 75 ± 5 K at the room temperature and 8.5 ± 1.5 K at the temperature of 12.5 K. The cryogenic performance is the best ever observed for field-effect transistors.