Carrier concentration and minority carrier lifetime measurement in semiconductor epitaxial layers by the mos capacitance method
- 1 April 1966
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 9 (4), 315-319
- https://doi.org/10.1016/0038-1101(66)90061-x
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structuresSolid-State Electronics, 1965
- Observation of Impurity Redistribution During Thermal Oxidation of Silicon Using the MOS StructureJournal of the Electrochemical Society, 1965
- Semiconductor Surface VaractorBell System Technical Journal, 1962
- Calculation of the Space Charge, Electric Field, and Free Carrier Concentration at the Surface of a SemiconductorJournal of Applied Physics, 1955
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952